4 GB DDR3 1333 ECC Registered
8 independent internal bank
Programmable CAS Latency: 6,7,8,9,10
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
Bi-directional Differential Data Strobe
Internal (self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
double sided component
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