2 GB DDR3 1333 So Dimm
8 independent internal bank
Programmable CAS Latency: 5,6,7,8,9,10
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
Bi-directional Differential Data Strobe
double sided component
Each Irvine Memory module is subjected to 100% burn-in test, thus excluding premature failure of DRAM and guaranteeing that each memory module is factory quality.
Each Irvine Memory module is subjected to 100% burn-in test, thus excluding premature failure of DRAM and guaranteeing that each memory module is factory quality.
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